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BSS 297 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 G Type BSS 297 Type BSS 297 BSS 297 Pin 2 D Marking SS 297 Pin 3 S VDS 200 V ID 0.48 A RDS(on) 2 Package TO-92 Ordering Code Q67000-S118 Q67000-S292 Tape and Reel Information E6288 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 200 200 Unit V VDS V DGR RGS = 20 k Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID 14 20 A 0.48 TA = 25 C DC drain current, pulsed IDpuls 1.92 TA = 25 C Power dissipation Ptot 1 W TA = 25 C Semiconductor Group 1 12/05/1997 BSS 297 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 125 E 55 / 150 / 56 K/W Unit C Tj Tstg RthJA Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 1.4 0.1 8 10 0.95 1.1 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS A nA nA 2 3.3 VDS = 200 V, VGS = 0 V, Tj = 25 C VDS = 200 V, VGS = 0 V, Tj = 125 C VDS = 130 V, VGS = 0 V, Tj = 25 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.45 A VGS = 4.5 V, ID = 0.45 A Semiconductor Group 2 12/05/1997 BSS 297 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.5 0.85 300 40 20 - S pF 400 60 30 ns 8 12 VDS 2 * ID * RDS(on)max, ID = 0.45 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Rise time tr 15 25 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Turn-off delay time td(off) 120 160 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Fall time tf 50 70 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Semiconductor Group 3 12/05/1997 BSS 297 Electrical Characteristics, at Tj = 25C, unless otherwise specified Symbol Values Parameter min. Reverse Diode Inverse diode continuous forward current IS typ. max. Unit A 0.85 0.48 1.92 V 1.1 TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.96 A Semiconductor Group 4 12/05/1997 BSS 297 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.50 A 1.2 W 1.0 Ptot 0.9 0.8 0.7 0.6 0.5 0.4 0.3 ID 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 0.05 0.00 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Semiconductor Group 5 12/05/1997 BSS 297 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C l Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 6.5 1.1 A i h Ptot = 1W g j kd fe c VGS [V] a 2.0 5.5 a b ID 0.9 0.8 0.7 0.6 0.5 0.4 a RDS (on) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VGS [V] = a 2.0 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 bb c d e f g h i j k l 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 0.3 0.2 0.1 c e h i j l gkf j 8.0 d k l 9.0 10.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A 0.9 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 2.2 A Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, VDS2 x ID x RDS(on)max 1.8 S ID 1.8 1.6 gfs 1.4 1.2 1.4 1.2 1.0 0.8 0.6 0.4 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 V 10 0.2 0.0 0.0 1.0 0.8 0.6 0.4 0.8 1.2 1.6 VGS A ID 2.2 Semiconductor Group 6 12/05/1997 BSS 297 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 0.45 A, VGS = 10 V 5.0 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 4.0 3.5 3.0 2.5 2.0 1.5 VGS(th) 3.6 3.2 2.8 98% 2.4 98% 2.0 1.6 typ typ 1.0 0.5 0.0 -60 1.2 2% 0.8 0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 1 pF C 10 2 Ciss A IF 10 0 Coss Crss 10 1 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 10 -2 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 12/05/1997 |
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